New Transistor Behavioral Model Formulation Suitable for Doherty PA Design

This work presents a new artificial neural network (ANN) model formulation for RF high-power transistors which includes the S-parameters of active device. improves small-signal extrapolation capability, and OFF-state impedance approximation, making it suitable Doherty power amplifier (DPA) design. capability plays key role in correct load modulation prediction, since, at low levels, peaking PA is subjected to loads that cannot be synthetized with passive load-pull system, forcing extrapolate. Thus, proposed able solve issues are normally observed when ANN-based models used complex architectures as PA. To validate behavioral model, 700-W asymmetrical LDMOS DPA, centered 1.84 GHz, was simulated measured.